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1 double-level polysilicon MOS
МОН-структура з двома рівнями полікристалічного кремніюEnglish-Ukrainian dictionary of microelectronics > double-level polysilicon MOS
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2 MOS
структура метал–оксид–напівпровідник, МОН-структура - aluminum-gate MOS
- avalanche-injection stacked gate MOS
- avalanche stacked gate MOS
- back-gate MOS
- bulk complementary MOS
- buried-channel MOS
- buried-oxide MOS
- clocked complementary MOS
- complementary symmetry MOS
- complementary MOS
- composite-gate MOS
- depletion MOS
- dielectric-insulated MOS
- dielectric-isolated MOS
- double-diffused MOS
- double-implanted MOS
- double-level polysilicon MOS
- elevated-electrode MOS
- enhancement MOS
- floating-gate MOS
- grooved-gate MOS
- high-threshold MOS
- high-voltage MOS
- ion-implanted MOS
- lateral-merged bipolar MOS
- low-threshold MOS
- merged MOS
- multigate MOS
- n-channelMOS
- nMOS
- p-channelMOS
- pMOS
- polycrystalline silicon-gate MOS
- quadruply self-aligned MOS
- refractory MOS
- resistive-gate MOS
- scaled MOS
- Schottky-barrier MOS
- self-aligned MOS
- silicon-gate MOS
- single-channel MOS
- single-poly gate MOS
- substrate-fed MOS
- vertical MOS
- V-groove MOS
- V-notch MOS -
3 device
1) прилад (напр. ІС, транзистор, діод); компонент; елемент 2) пристрій - active device
- add-on device
- analog device
- array device
- attached device
- backup device
- beam-leadeddevice
- beam-leaddevice
- bipolar device
- bipolar-MOS device
- blown-fuse device
- bubble-domain device
- bubble- device
- bucket-brigade device
- bulk асoustic-wave device
- bulk-channel carrier-transfer device
- bulk-effect device
- carrier-transfer device
- charge-coupled device
- charge-domain device
- charge-injection device
- charge-priming device
- charge-transfer device
- chip-and-wire device
- CMOS device
- CMOS/SOS device
- compound-semiconductor device
- contiguous-disk device
- controlled surface device
- custom-designed device
- custom device
- dense device
- depletion-modedevice
- depletiondevice
- dielectric isolation device
- diffused device
- discrete device
- double-diffused MOS device
- elastic-surface-wave device
- electrooptic device
- elementary device
- enchancement-mode device
- enchancement device
- end-use device
- epiplanar device
- epitaxial device
- FAMOS device
- field-effect device
- field-programmable device
- FIMOS device
- functional device
- graded-gap semiconductor device
- graded-gap device
- Gurm-effect device
- Gurm device
- Hall-effectdevice
- Halldevice
- hardeneddevice
- harddevice
- heteroepitaxial device
- heterojunction device
- high-gain device
- high-immunity noise device
- high-technology device
- high-threshold device
- homojunction device
- hybrid high-power device
- identification device
- I2L device
- image [imaging] device
- IMPATT device
- implanted device
- integrated-optic device
- integrated semiconductor device
- integration device
- interdigitated device
- interface device
- Josephson-junctiondevice
- Josephsondevice
- Josephson logic device
- junction-isolated device
- large-scale integrated device
- large-scale integration device
- latch-up free CMOS device
- leaded device
- leadless inverted device
- light-wave device
- locked-in device
- logic array device
- low-power Schottky device
- magnetostatic-wave device
- majority-carrier device
- mask-programmable device
- metal-masked device
- metal-semiconductor device
- microdiscrete device
- microelectronic device
- minority-carrier device
- MIS-type device
- MIS device
- mixed-process device
- mixed device
- molecular-beam epitaxy-based device
- monolithic device
- MOS device
- MTL device
- multilayered device
- multilevel device
- n-channel MOS device
- n-channel device
- negative-resistance device
- non-CPU device
- n–p–n device
- off-chip device
- on-chip device
- optocoupler semiconductor device
- optocoupling device
- passive device
- p-channel MOS device
- p-channel device
- peripheral device
- permalloy bubble device
- permalloy T-bar device
- photo-coupled semiconductor device
- photosensitive device
- piezoelectric device
- piggyback device
- planar device
- plotting device
- plug-in device
- p-n-p device
- positioning device
- printing device
- programmable logic-array device
- programmable device
- quantum device
- quantum-well device
- redundancy device
- resin-molded device
- SAW device
- SAW delay device
- scaled-downdevice
- scaleddevice
- Schottky-barrier device
- Schottky device
- second-source device
- self-aligned semiconductor device
- semiconductor-on-sapphire
- silicon-on-dielectric device
- silicon-on-insulator device
- silicon-on-sapphire device
- single device
- single-crystal device
- slow device
- SLS device
- small-geometry device
- solder-evacuator device
- SOS/MOS device
- stacked semiconductor device
- static-sensitive device
- stripeline device
- submicron-scale MOS device
- superconducting Josephson-junction device
- superconducting quantum interference device
- superconductive quantum interferometric device
- super-lattice functional device
- superstructure device
- surface-acoustic-wave device
- surface charge-transfer device
- surface-mounted device
- switching device
- TAB device
- thermocompression bonded device
- thick-film device
- thin-film device
- transcalent device
- transferred-electron device
- transil-time-negative-resistance device
- trench isolated device
- tunnel -еffect device
- tunnel device
- two-level polysilicon MOS device
- ULA device
- ultrafine-scale device
- ultra-large-scale integrated device
- ultra-submicron device
- uncased device
- vertical-junction device
- very large-scale integrated-circuit device
- very large-scale integration device
- V-groove MOS device
- V-groove device
- wafer-printing device -
4 gate
1. ім.1)логічний елемент; вентиль; логічна схема2) затвор (напр. польового транзистора); керуючий електрод3) пост; робоче місце4) селекторний [стробуючий] імпульс, строб-імпульс2. дієсл. здійснювати селекцію в часі, стробувати - AND gate
- AND–NOR gate
- AND-NOT gate
- AND-OR gate
- back gate
- Boolean gate
- channelless sea gates
- closed-geometry gate
- coincidence gate
- control gate
- digital logic gate
- digital summation threshold logic gate
- discrete gate
- doped polysilicon gate
- double-input gate
- DSTL gate
- emitter-coupled logic gate
- emitter-coupled gate
- equivalent gate
- erase gate
- exclusive NOR gate
- exclusive OR gate
- expandable gate
- fan-in gate
- fan-out gate
- fault-free gate
- faulty gate
- finger gate
- floating gate
- functional gate
- IIL gate
- I2L gate
- imaging gate
- inclusive OR gate
- inspectation gate
- intrinsic gate
- inverting gate
- isolated gate
- Josephson-junction logic gate
- Josephson logic gate
- Josephson tunneling logic gate
- logic gate
- majority gate
- meander gate
- MOS gate
- MOSFET gate
- multiple-level logic gate
- multiple-level gate
- NAND gate
- negation gate
- negative gate
- negative AND gate
- nitride gate
- NOR gate
- NOT gate
- n+ poly gate
- offset gate
- OR gate
- OR–NOT gate
- polycrystalline silicon gate
- polysilicon gate
- process control gate
- QA gate
- quantum interference Joseph-son gate
- recessed gate
- refractory-metal gate
- replicate/annihilate gate
- resistive gate
- Scholtky-barriergate
- Scholtkygate
- Scholtky TTL gate
- sea gates
- self-aligned gate
- self-registered gate
- single-input gate
- single -logic level gate
- single level gate
- single-poly gate
- stacked gate
- storage gate
- transfer gate
- transistor gate
- variable threshold logic gate
- variable threshold gate
- V-groove MOS gate
- p-gate
См. также в других словарях:
double-level polysilicon CMOS structure — jungtinis dvisluoksnio polikristalinio silicio MOP darinys statusas T sritis radioelektronika atitikmenys: angl. double level polysilicon CMOS structure; poly squared CMOS; poly squared CMOS structure vok. komplementäre MOS Struktur mit zwei… … Radioelektronikos terminų žodynas
komplementäre MOS-Struktur mit zwei Polysiliziumebenen — jungtinis dvisluoksnio polikristalinio silicio MOP darinys statusas T sritis radioelektronika atitikmenys: angl. double level polysilicon CMOS structure; poly squared CMOS; poly squared CMOS structure vok. komplementäre MOS Struktur mit zwei… … Radioelektronikos terminų žodynas
jungtinis dvisluoksnio polikristalinio silicio MOP darinys — statusas T sritis radioelektronika atitikmenys: angl. double level polysilicon CMOS structure; poly squared CMOS; poly squared CMOS structure vok. komplementäre MOS Struktur mit zwei Polysiliziumebenen, f rus. КМОП структура с двумя слоями… … Radioelektronikos terminų žodynas
poly squared CMOS — jungtinis dvisluoksnio polikristalinio silicio MOP darinys statusas T sritis radioelektronika atitikmenys: angl. double level polysilicon CMOS structure; poly squared CMOS; poly squared CMOS structure vok. komplementäre MOS Struktur mit zwei… … Radioelektronikos terminų žodynas
poly squared CMOS structure — jungtinis dvisluoksnio polikristalinio silicio MOP darinys statusas T sritis radioelektronika atitikmenys: angl. double level polysilicon CMOS structure; poly squared CMOS; poly squared CMOS structure vok. komplementäre MOS Struktur mit zwei… … Radioelektronikos terminų žodynas
structure CMOS à deux couches de polysilicium — jungtinis dvisluoksnio polikristalinio silicio MOP darinys statusas T sritis radioelektronika atitikmenys: angl. double level polysilicon CMOS structure; poly squared CMOS; poly squared CMOS structure vok. komplementäre MOS Struktur mit zwei… … Radioelektronikos terminų žodynas
structure CMOS à deux niveaux de silicium polycristallin — jungtinis dvisluoksnio polikristalinio silicio MOP darinys statusas T sritis radioelektronika atitikmenys: angl. double level polysilicon CMOS structure; poly squared CMOS; poly squared CMOS structure vok. komplementäre MOS Struktur mit zwei… … Radioelektronikos terminų žodynas
КМОП-структура с двумя слоями поликристаллического кремния — jungtinis dvisluoksnio polikristalinio silicio MOP darinys statusas T sritis radioelektronika atitikmenys: angl. double level polysilicon CMOS structure; poly squared CMOS; poly squared CMOS structure vok. komplementäre MOS Struktur mit zwei… … Radioelektronikos terminų žodynas
КМОП-структура с двумя уровнями поликристаллического кремния — jungtinis dvisluoksnio polikristalinio silicio MOP darinys statusas T sritis radioelektronika atitikmenys: angl. double level polysilicon CMOS structure; poly squared CMOS; poly squared CMOS structure vok. komplementäre MOS Struktur mit zwei… … Radioelektronikos terminų žodynas
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